PartsTable TECHNICAL DATA SHEET
JULY 2026Technical Data Sheet

200705-700Transistor

Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems · NSN 5961-00-419-5368 · FSC 5961 · No Item Name Available
Verified by PartsTable
NSN 5961-00-419-5368 — this item is cataloged by the U.S. Government under National Stock Number 5961-00-419-5368. Primary manufacturer part number: 200705-700.
Features
  • Transistor — FSC 5961
  • Semiconductor Material: SILICON
  • Power Rating Per Characteristic: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
  • Terminal Type and Quantity: 2 UNINSULATED WIRE LEAD AND 1 CASE
  • Mounting Method: UNTHREADED HOLE(S)
  • Electrode Internally-Electrically Connected to Case: COLLECTOR
  • Internal Configuration: JUNCTION CONTACT
  • Overall Diameter: 0.875 INCHES MAXIMUM IN
Applications
  • Industrial maintenance and repair
  • Government and military logistics
  • Equipment overhaul and refurbishment
General Description

The Transistor, cataloged under National Stock Number 5961-00-419-5368, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 3 commercial cross-references from 3 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.

Technical Specifications
ParameterValue
NSN5961-00-419-5368
Primary Part Number200705-700
Item NameTransistor
FSC / FSG5961 / 59 — No Item Name Available
ManufacturerBae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems
StatusACTIVE
Semiconductor MaterialSILICON
Power Rating Per Characteristic150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
Terminal Type and Quantity2 UNINSULATED WIRE LEAD AND 1 CASE
Mounting MethodUNTHREADED HOLE(S)
Electrode Internally-Electrically Connected to CaseCOLLECTOR
Internal ConfigurationJUNCTION CONTACT
Overall Diameter0.875 INCHES MAXIMUM IN
Maximum Operating Temp Per Measurement Point200.0 CELSIUS JUNCTION DEGC
Internal Junction ConfigurationNPN
Features ProvidedHERMETICALLY SEALED CASE
Mounting Facility Quantity2
Voltage Rating in Volts Per Characteristic160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Current Rating Per Characteristic4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
Lifecycle & Compliance
Acquisition StatusACTIVE
HAZMATNo
Verified Substitutes 11
5961-00-031-364571A0060-1 INTERCHANGEABLE
Transistor
Crane Electronics, Inc.
5961-00-222-957567A5A19-1 INTERCHANGEABLE
Transistor
Navair and Navsea Managed Original Design Activity Dwg Not Material/parts Supplier
5961-00-254-32013165091 INTERCHANGEABLE
Transistor
Honeywell International Inc. Dba Honeywell International Div Aerospace - Tempe (west Warner Road)
5961-00-311-8954232529-000 INTERCHANGEABLE
Transistor
Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems
5961-00-929-50142N3773 INTERCHANGEABLE
Transistor
Renesas Electronics America Inc
5961-01-012-6680352-0690-030 INTERCHANGEABLE
Transistor
Rockwell Collins, Inc. Dba Collins Aerospace Government Systems Div Collins Aerospace - Government Systems
5961-01-029-5640 INTERCHANGEABLE
Transistor
5961-01-051-8613928783-1C INTERCHANGEABLE
Transistor
Raytheon Company Dba Raytheon
5961-01-131-6903466526 INTERCHANGEABLE
Transistor
Miltope Corporation
5961-01-150-1789Q15-3-4G INTERCHANGEABLE
Transistor
Eldec Aerospace Corp
Cross-Reference Index
Part NumberManufacturer
2N3773 Renesas Electronics America Inc (USA)
2N3773 Solitron Devices, Inc. (USA)
200705-700 PRIMARY Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA)
Related Parts
5961-00-031-3645INTERCHANGEABLE
TRANSISTOR
71A0060-1
5961-00-222-9575INTERCHANGEABLE
TRANSISTOR
67A5A19-1
5961-00-254-3201INTERCHANGEABLE
TRANSISTOR
3165091
5961-00-311-8954INTERCHANGEABLE
TRANSISTOR
232529-000
5961-00-929-5014INTERCHANGEABLE
TRANSISTOR
2N3773
5961-01-012-6680INTERCHANGEABLE
TRANSISTOR
352-0690-030
5961-01-029-5640INTERCHANGEABLE
TRANSISTOR
5961-01-051-8613INTERCHANGEABLE
TRANSISTOR
928783-1C
5961-01-131-6903INTERCHANGEABLE
TRANSISTOR
466526
5961-01-150-1789INTERCHANGEABLE
TRANSISTOR
Q15-3-4G
5961-01-252-8709INTERCHANGEABLE
TRANSISTOR
71A0060-75

Frequently Asked Questions

What is NSN 5961-00-419-5368?

NSN 5961-00-419-5368 is a Transistor, manufactured by Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems, classified under FSC 5961 (No Item Name Available). Status: active.

What are the part numbers for NSN 5961-00-419-5368?

NSN 5961-00-419-5368 has 3 cross-referenced part numbers: 2N3773 (Renesas Electronics America Inc), 2N3773 (Solitron Devices, Inc.), 200705-700 (Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems).

What NSN replaces 5961-00-419-5368?

There are 11 known substitutes for 5961-00-419-5368: 5961-00-031-3645, 5961-00-222-9575, 5961-00-254-3201 and 8 more. Verify interchangeability with system specifications before substitution.

What are the specifications of 200705-700?

Key specifications for 200705-700: Semiconductor Material: SILICON; Power Rating Per Characteristic: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION; Terminal Type and Quantity: 2 UNINSULATED WIRE LEAD AND 1 CASE; Mounting Method: UNTHREADED HOLE(S). 14 total characteristics are documented in the Federal Logistics Information System.

Validated with multiple authoritative sources, including Government, OEM, and Certified sources.
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