The Semiconductor Device,diode, cataloged under National Stock Number 5961-00-231-3769, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems. Government technical data includes 13 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 12 commercial cross-references from 11 manufacturers, enabling identification through both NSN and commercial part number lookups. 10 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-231-3769 |
| Primary Part Number | 200977-010 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems |
| Status | ACTIVE |
| Power Rating Per Characteristic | 0.250 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| Maximum Operating Temp Per Measurement Point | 175.0 CELSIUS AMBIENT AIR DEGC |
| Voltage Tolerance in Percent | -5.0 TO 5.0 |
| Terminal Length | 1.000 INCHES MINIMUM IN |
| Specification/standard Data | 80131-RELEASE5042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Features Provided | BURN IN AND HERMETICALLY SEALED CASE |
| Voltage Rating in Volts Per Characteristic | 6.27 MINIMUM BREAKDOWN VOLTAGE, DC AND 6.93 MAXIMUM BREAKDOWN VOLTAGE, DC |
| Overall Diameter | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| Current Rating Per Characteristic | 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC |
| Mounting Method | TERMINAL |
| Terminal Type and Quantity | 2 UNINSULATED WIRE LEAD |
| Material | GLASS ENCLOSURE |
| Material | SILICON SEMICONDUCTOR |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 1N4613A | N a P Smd Technology Inc |
| 1N4613A | C O D I Corp Dba Codi Semiconductor Inc (USA) |
| 1N4613A | Fairchild Semiconductor Corp Components Group Sub of Schlumberger Ltd (USA) |
| 1N4613A | Electronic Industries Association |
| 200977-010 PRIMARY | Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems (USA) |
| 1N4613A | Silicon Transistor Corporation Dba Same (USA) |
| RELEASE5042 | Electronic Industries Association |
| 1N4613A | Microsemi Corporation (USA) |
| 1N4613A | International Diode Corp (USA) |
| 232160 | Woodward, Inc. (USA) |
| 1N4613A | Telcom Semiconductor Inc (USA) |
| 1N4613A | Fairchild Semiconductor Corp (USA) |
NSN 5961-00-231-3769 is a Semiconductor Device,diode, manufactured by Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems, classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-00-231-3769 has 12 cross-referenced part numbers: 1N4613A (N a P Smd Technology Inc), 1N4613A (C O D I Corp Dba Codi Semiconductor Inc), 1N4613A (Fairchild Semiconductor Corp Components Group Sub of Schlumberger Ltd), 1N4613A (Electronic Industries Association), 200977-010 (Bae Systems Information and Electronic Systems Integration Inc. Dba Bae Systems) and 7 more.
There are 10 known substitutes for 5961-00-231-3769: 5961-00-011-8280, 5961-00-111-8479, 4710-00-294-5513 and 7 more. Verify interchangeability with system specifications before substitution.
Key specifications for 200977-010: Power Rating Per Characteristic: 0.250 WATTS MAXIMUM TOTAL POWER DISSIPATION; Maximum Operating Temp Per Measurement Point: 175.0 CELSIUS AMBIENT AIR DEGC; Voltage Tolerance in Percent: -5.0 TO 5.0; Terminal Length: 1.000 INCHES MINIMUM IN. 14 total characteristics are documented in the Federal Logistics Information System.