The Semiconductor Device,diode, cataloged under National Stock Number 5961-00-062-0208, is classified within Federal Supply Class 5961 (No Item Name Available) of the Electrical and Electronic Equipment Components group. The primary manufacturer of record is L3harris Technologies, Inc.. Government technical data includes 14 verified specifications, sourced from the Federal Logistics Information System (FLIS). This item has 28 commercial cross-references from 25 manufacturers, enabling identification through both NSN and commercial part number lookups. 11 verified substitutes exist in the FLIS interchangeability database. Current acquisition status: Active.
| Parameter | Value |
|---|---|
| NSN | 5961-00-062-0208 |
| Primary Part Number | 131034-001 |
| Item Name | Semiconductor Device,diode |
| FSC / FSG | 5961 / 59 — No Item Name Available |
| Manufacturer | L3harris Technologies, Inc. |
| Status | ACTIVE |
| Material | SILICON SEMICONDUCTOR |
| Maximum Operating Temp Per Measurement Point | 125.0 CELSIUS AMBIENT AIR DEGC |
| Terminal Length | 1.000 INCHES MINIMUM IN |
| Mounting Method | TERMINAL |
| Overall Diameter | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| Power Rating Per Characteristic | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| Function for Which Designed | ZENER DIODE |
| Current Rating Per Characteristic | 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
| Voltage Tolerance in Percent | -5.0 TO 5.0 |
| Voltage Rating in Volts Per Characteristic | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| Joint Electronic Device Engineering Council/jedec/case Outline Designation | DO-7 |
| Features Provided | HERMETICALLY SEALED CASE |
| Terminal Type and Quantity | 2 UNINSULATED WIRE LEAD |
| Material | GLASS ENCLOSURE |
| Acquisition Status | ACTIVE |
| HAZMAT | No |
| Part Number | Manufacturer |
|---|---|
| 131034-001 | L3harris Technologies, Inc. (USA) |
| 1N823A | C O D I Corp Dba Codi Semiconductor Inc (USA) |
| 1N823A | Trw Inc Trw Electronic Components Irc Fixed Resistors Philadelphia Div (USA) |
| 03C00823A | Hekimian Laboratories Inc (USA) |
| 1N823A | Trw Electronics and Defense Sector Rf Devices (USA) |
| 99194385 | Thales Sa (FRA) |
| F00001-12 | Raytheon Company Dba Raytheon (USA) |
| 1N823A | Microsemi Corp.-Scottsdale Dba Microsemi (USA) |
| 9005-4-1 | Radiodetection, Llc (USA) |
| Q531784312 | Rheinmetall Air Defence Ag (CHE) |
| 1N823A | Military Specifications Promulgated by Military Departments/agencies Under Authority of Defense Standardization Manual 4120 3-M |
| 530160-2 | Raytheon Company Dba Raytheon (USA) |
| 1N823A | Western Semiconductors Div (USA) |
| 1N823A | Gilbert Engineering Co Inc/incon Sub of Transitron Electronic Corp (USA) |
| 1N823A | International Diode Corp (USA) |
| 05010000 | Digitec Corp (USA) |
| 1N823A | Ampex Systems Corp (USA) |
| 1N823A | Freescale Semiconductor, Inc. (USA) |
| 1N823A | Silicon Transistor Corporation Dba Same (USA) |
| 66003004 | Tdk-Lambda Americas Inc. Div High Power Division (USA) |
NSN 5961-00-062-0208 is a Semiconductor Device,diode, manufactured by L3harris Technologies, Inc., classified under FSC 5961 (No Item Name Available). Status: active.
NSN 5961-00-062-0208 has 28 cross-referenced part numbers: 131034-001 (L3harris Technologies, Inc.), 1N823A (C O D I Corp Dba Codi Semiconductor Inc), 1N823A (Trw Inc Trw Electronic Components Irc Fixed Resistors Philadelphia Div), 03C00823A (Hekimian Laboratories Inc), 1N823A (Trw Electronics and Defense Sector Rf Devices) and 23 more.
There are 11 known substitutes for 5961-00-062-0208: 5961-00-005-4251, 5961-00-103-7417, 5961-00-477-4824 and 8 more. Verify interchangeability with system specifications before substitution.
Key specifications for 131034-001: Material: SILICON SEMICONDUCTOR; Maximum Operating Temp Per Measurement Point: 125.0 CELSIUS AMBIENT AIR DEGC; Terminal Length: 1.000 INCHES MINIMUM IN; Mounting Method: TERMINAL. 15 total characteristics are documented in the Federal Logistics Information System.