The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.200 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-025-7560, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.200 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.875 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| power_rating_per_characteristic | 110.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-025-7560 |
| CURRENT RATING PER CHARACTERISTIC | 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | 110.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| MOUNTING FACILITY QUANTITY | 2 |