580R891H01: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.270 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), overall_diameter: 0.430 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-099-0583, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_length | 0.270 INCHES NOMINAL IN |
| mounting_method | THREADED STUD(S) |
| overall_diameter | 0.430 INCHES NOMINAL IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| nominal_thread_size | 0.190 INCHES IN |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-099-0583 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| OVERALL DIAMETER | 0.430 INCHES NOMINAL IN |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.270 INCHES NOMINAL IN |
| NOMINAL THREAD SIZE | 0.190 INCHES IN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| MATERIAL | CERAMIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |