5800583-942300-2: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.325 INCHES MAXIMUM IN, overall_height: 0.200 INCHES MAXIMUM IN, overall_length: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN, mounting_method: PRESS FIT, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-584-4562, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.325 INCHES MAXIMUM IN |
| overall_height | 0.200 INCHES MAXIMUM IN |
| overall_length | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| mounting_method | PRESS FIT |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 14 RIBBON |
| component_name_and_quantity | 4 TRANSISTOR |
| power_rating_per_characteristic | 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC SECOND TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-584-4562 |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN FOURTH TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN THIRD TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN FIRST TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN SECOND TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | PRESS FIT |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |