5725010-3 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

5725010-3: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.625 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.375 INCHES MAXIMUM IN, lens_transparency: TRANSLUCENT, luminous_intensity: 240.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-233-2118, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5725010-3

NSN: 5980-01-233-2118
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 53711 — NAVAL SEA SYSTEMS COMMAND (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.625 INCHES MAXIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.375 INCHES MAXIMUM IN
lens_transparency	TRANSLUCENT
luminous_intensity	240.0 MILLICANDELA NOMINAL
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM ARSENIDE PHOSPHIDE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
color_tone_produced_per_source	YELLOW LENS
internal_junction_configuration	PN
current_rating_per_characteristic	30.80 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
NSN	5980-01-233-2118

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM FORWARD VOLTAGE, DC

•

OVERALL DIAMETER: 0.375 INCHES MAXIMUM IN

•

MOUNTING METHOD: PRESS FIT

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

LUMINOUS INTENSITY: 240.0 MILLICANDELA NOMINAL

•

INTERNAL CONFIGURATION: POINT CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	5.0 MAXIMUM FORWARD VOLTAGE, DC
OVERALL DIAMETER	0.375 INCHES MAXIMUM IN
MOUNTING METHOD	PRESS FIT
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
LUMINOUS INTENSITY	240.0 MILLICANDELA NOMINAL
OVERALL LENGTH	0.625 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	POINT CONTACT
CURRENT RATING PER CHARACTERISTIC	30.80 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
LENS TRANSPARENCY	TRANSLUCENT

SUBSTITUTES & CROSS-REFERENCES 3

SP830223-YReference document

Same NSN cross-reference

Reference document — Secondary reference

T531011403Reference document

Same NSN cross-reference

Reference document — Secondary reference

30378-3Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5725010-3?

5725010-3 is a LIGHT EMITTING DIODE.

What parts can replace 5725010-3?

There are 3 known substitutes for 5725010-3: SP830223-Y, T531011403, 30378-3. Substitute compatibility should be verified for your specific system.

What is the NSN for 5725010-3?

5725010-3 is cataloged in the U.S. Government catalog under NSN 5980-01-233-2118. This indicates validated use in U.S. government and defense supply chains.

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