5538011-1: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.580 INCHES MAXIMUM IN, overall_height: 0.580 INCHES MAXIMUM IN, overall_length: 0.595 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: THE CERAMIC BODIES OF THESE DEVICES CONTAIN BERYLLIUM OXIDE; JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-273-2189, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_width | 0.580 INCHES MAXIMUM IN |
| overall_height | 0.580 INCHES MAXIMUM IN |
| overall_length | 0.595 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| special_features | THE CERAMIC BODIES OF THESE DEVICES CONTAIN BERYLLIUM OXIDE; JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.164 INCHES IN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| thread_series_designator | UNIFIED NATIONAL COARSE (UNC) |
| mounting_facility_quantity | 1 |
| NSN | 5961-01-273-2189 |
| OVERALL HEIGHT | 0.580 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.595 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.580 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |