5189001: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: ALUMINUM ALLOY OVERALL, thread_length: 1.125 INCHES NOMINAL IN, overall_length: 0.468 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), thread_diameter: 11.500 INCHES NOMINAL IN, outside_diameter: 6.500 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-008-8257, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | ALUMINUM ALLOY OVERALL |
| thread_length | 1.125 INCHES NOMINAL IN |
| overall_length | 0.468 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| thread_diameter | 11.500 INCHES NOMINAL IN |
| outside_diameter | 6.500 INCHES NOMINAL IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNP |
| style_designator | SNAP TYPE THREADED EXTERNAL |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.190 INCHES IN |
| internal_configuration | JUNCTION CONTACT |
| pressure_relief_method | MANUAL |
| NSN | 5961-00-008-8257 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.468 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM IN |
| NOMINAL THREAD SIZE | 0.190 INCHES IN |