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5082-3080TXV — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

5082-3080TXV: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-005-0360, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
5082-3080TXV
NSN: 5961-01-005-0360
NIINs: 010050360, 010587803
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50434 — AVAGO TECHNOLOGIES US INC DIV AVAGO TECHNOLOGIES (USA)
SPECIFICATIONS
materialGLASS ENCLOSURE
overall_length0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.000 INCHES MINIMUM IN
overall_diameter0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
power_rating_per_characteristic200.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
current_rating_per_characteristic10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic-100.0 MAXIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point150.0 CELSIUS AMBIENT AIR DEGC
NSN5961-01-005-0360
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 5082-3080TXV MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
OVERALL DIAMETER: 0.076 INCHES MAXIMUM IN
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
MATERIAL: SILICON SEMICONDUCTOR
•
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TECHNICAL CHARACTERISTICS
OVERALL DIAMETER0.076 INCHES MAXIMUM IN
OVERALL LENGTH0.170 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 4
4805-02-0002Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
2917611-002Reference document
Same NSN cross-reference
Reference document — Secondary reference
5082-3092Reference document
Same NSN cross-reference
Reference document — Secondary reference
SCF5000Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 5082-3080TXV?
5082-3080TXV is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 5082-3080TXV?
There are 4 known substitutes for 5082-3080TXV: 4805-02-0002, 2917611-002, 5082-3092 and 1 more. Substitute compatibility should be verified for your specific system.
What is the NSN for 5082-3080TXV?
5082-3080TXV is cataloged in the U.S. Government catalog under NSN 5961-01-005-0360. This indicates validated use in U.S. government and defense supply chains.
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