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502AS3237 — LIGHT EMITTING DIODE

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

502AS3237: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.180 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN, internal_configuration: POINT CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-033-0710, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
502AS3237
NSN: 5980-01-033-0710
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 30003 — NAVAL AIR SYSTEMS COMMAND MANAGED ORIGINAL DESIGN ACTIVITY NOT MATERIAL/PARTS SUPPLIER (USA)
SPECIFICATIONS
materialPLASTIC ENCLOSURE
overall_length0.180 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length0.500 INCHES MINIMUM IN
overall_diameter0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
internal_configurationPOINT CONTACT
semiconductor_materialGALLIUM ARSENIDE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
function_for_which_designedVISIBLE LIGHT EMITTING
color_tone_produced_per_sourceINFRARED SEMICONDUCTOR
internal_junction_configurationPN
power_rating_per_characteristic100.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
NSN5980-01-033-0710
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available LIGHT EMITTING DIODE TITLE COMPONENT PN 502AS3237 MFR LIGHT EMITTING DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS AMBIENT AIR DEGC
•
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 0.500 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
INTERNAL JUNCTION CONFIGURATION: PN
•
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
TERMINAL LENGTH0.500 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
INTERNAL JUNCTION CONFIGURATIONPN
SEMICONDUCTOR MATERIALGALLIUM ARSENIDE
OVERALL LENGTH0.180 INCHES MAXIMUM IN
INTERNAL CONFIGURATIONPOINT CONTACT
CURRENT RATING PER CHARACTERISTIC100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
SUBSTITUTES & CROSS-REFERENCES 4
M120CReference document
Same NSN cross-reference
Reference document — Secondary reference
TIL-32Reference document
Same NSN cross-reference
Reference document — Secondary reference
ME7140Reference document
Same NSN cross-reference
Reference document — Secondary reference
639AS1047Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 502AS3237?
502AS3237 is a LIGHT EMITTING DIODE.
What parts can replace 502AS3237?
There are 4 known substitutes for 502AS3237: M120C, TIL-32, ME7140 and 1 more. Substitute compatibility should be verified for your specific system.
What is the NSN for 502AS3237?
502AS3237 is cataloged in the U.S. Government catalog under NSN 5980-01-033-0710. This indicates validated use in U.S. government and defense supply chains.
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