5016188-001 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

5016188-001: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.175 INCHES MAXIMUM IN, overall_height: 1.170 INCHES MAXIMUM IN, overall_length: 0.380 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPNP, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-150-8678, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

5016188-001

NSN: 5961-01-150-8678
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: K1182 — THALES UK LIMITED DBA THALES UK LTD TRAINING AND SIMULATION (GBR)

SPECIFICATIONS

overall_width	0.175 INCHES MAXIMUM IN
overall_height	1.170 INCHES MAXIMUM IN
overall_length	0.380 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPNP
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	20.0 WATTS MAXIMUM GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
current_rating_per_characteristic	100.00 AMPERES MAXIMUM ON-STATE CURRENT, PEAK AND 3.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT
NSN	5961-01-150-8678

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	1.170 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.380 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	0.175 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

221007-001Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 5016188-001?

5016188-001 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 5016188-001?

There is 1 known substitute for 5016188-001: 221007-001. Substitute compatibility should be verified for your specific system.

What is the NSN for 5016188-001?

5016188-001 is cataloged in the U.S. Government catalog under NSN 5961-01-150-8678. This indicates validated use in U.S. government and defense supply chains.

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5016188-001 — SEMICONDUCTOR DEVICE,THYRISTOR

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