4N35M — SEMICONDUCTOR DEVICE,PHOTO

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

4N35M: SEMICONDUCTOR DEVICE,PHOTO.

The SEMICONDUCTOR DEVICE,PHOTO is a the manufacturer industrial component. Key specifications include overall_width: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, overall_height: 0.115 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN, overall_length: 0.320 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: GALLIUM ARSENIDE INFRARED EMITTING DIODE, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-577-7566, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

4N35M

NSN: 5961-01-577-7566
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07263 — FAIRCHILD SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

overall_width	0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
overall_height	0.115 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
overall_length	0.320 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
mounting_method	TERMINAL
special_features	GALLIUM ARSENIDE INFRARED EMITTING DIODE
semiconductor_material	SILICON
terminal_type_and_quantity	6 PIN
function_for_which_designed	PHOTOTRANSISTOR
part_name_assigned_by_controlling_agency	PHOTOTRANSISTOR OPTOCOUPLER
voltage_rating_in_volts_per_characteristic	0.3 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
NSN	5961-01-577-7566

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.3 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.115 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	0.3 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.320 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
OVERALL WIDTH	0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
FUNCTION FOR WHICH DESIGNED	PHOTOTRANSISTOR
SPECIAL FEATURES	GALLIUM ARSENIDE INFRARED EMITTING DIODE
PART NAME ASSIGNED BY CONTROLLING AGENCY	PHOTOTRANSISTOR OPTOCOUPLER
TERMINAL TYPE AND QUANTITY	6 PIN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

10343420Reference document

Same NSN cross-reference

Reference document — Informative reference only

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 4N35M?

4N35M is a SEMICONDUCTOR DEVICE,PHOTO.

What parts can replace 4N35M?

There is 1 known substitute for 4N35M: 10343420. Substitute compatibility should be verified for your specific system.

What is the NSN for 4N35M?

4N35M is cataloged in the U.S. Government catalog under NSN 5961-01-577-7566. This indicates validated use in U.S. government and defense supply chains.

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4N35M — SEMICONDUCTOR DEVICE,PHOTO

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