The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.297 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-630-2052, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.297 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.620 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNP |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| power_rating_per_characteristic | 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| NSN | 5961-00-630-2052 |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| OVERALL LENGTH | 0.297 INCHES NOMINAL IN |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM IN |
| MOUNTING FACILITY QUANTITY | 2 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| MOUNTING METHOD | UNTHREADED HOLE(S) |