451064-01: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, features_provided: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-021-2407, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| features_provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 8 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 525.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | -40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| joint_electronic_device_engineering_council/jedec/case_outline_designation | TO-99 |
| NSN | 5961-01-021-2407 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-99 |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |