The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE, overall_length: 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN, mounting_method: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE, terminal_length: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE IN, overall_diameter: 0.191 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN, features_provided: HERMETICALLY SEALED CASE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-306-8849, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE |
| overall_length | 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| mounting_method | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| terminal_length | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| overall_diameter | 0.191 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| function_for_which_designed | GENERAL PURPOSE |
| component_function_relationship | MATCHED |
| NSN | 5961-01-306-8849 |
| MATERIAL | GLASS ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 340.0 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE DEGC |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |