44-036301-02: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_height: 1.760 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.500 INCHES MINIMUM IN, overall_diameter: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT-DUAL GATE, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-217-2640, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_height | 1.760 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.500 INCHES MINIMUM IN |
| overall_diameter | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| internal_configuration | FIELD EFFECT-DUAL GATE |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.021 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 100.00 MILLIAMPERES NOMINAL GATE CURRENT |
| NSN | 5961-01-217-2640 |
| OVERALL HEIGHT | 1.760 INCHES MAXIMUM IN |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL GATE CURRENT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| TERMINAL CIRCLE DIAMETER | 0.021 INCHES MAXIMUM IN |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |