41347-311-00-7: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, mounting_method: PRESS FIT, semiconductor_material: SILICON ALL TRANSISTOR, terminal_type_and_quantity: 14 RIBBON, component_name_and_quantity: 4 TRANSISTOR, power_rating_per_characteristic: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-191-9450, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| mounting_method | PRESS FIT |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 14 RIBBON |
| component_name_and_quantity | 4 TRANSISTOR |
| power_rating_per_characteristic | 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-191-9450 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | PRESS FIT |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 14 RIBBON |
| POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |