411-2526: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 1.8 MILLIMETERS MAXIMUM MM, transfer_ratio: 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: PRESS FIT, overall_diameter: 2.1 MILLIMETERS NOMINAL MM, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-110-0668, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| overall_length | 1.8 MILLIMETERS MAXIMUM MM |
| transfer_ratio | 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| mounting_method | PRESS FIT |
| overall_diameter | 2.1 MILLIMETERS NOMINAL MM |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 4 RIBBON |
| power_rating_per_characteristic | 290.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-110-0668 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 2.1 MILLIMETERS NOMINAL MM |
| MOUNTING METHOD | PRESS FIT |
| TRANSFER RATIO | 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.8 MILLIMETERS MAXIMUM MM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| MATERIAL | CERAMIC ENCLOSURE |