40ED108 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

40ED108: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.320 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-050-4831, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

40ED108

NSN: 5961-01-050-4831
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 21845 — SOLITRON DEVICES, INC. (USA)

SPECIFICATIONS

overall_length	0.320 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.437 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-01-050-4831

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.320 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.437 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.190 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

363258Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

40ED106Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Semi-active item — no replacement plannedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 40ED108?

40ED108 is a TRANSISTOR.

What parts can replace 40ED108?

There are 2 known substitutes for 40ED108: 363258, 40ED106. Substitute compatibility should be verified for your specific system.

What is the NSN for 40ED108?

40ED108 is cataloged in the U.S. Government catalog under NSN 5961-01-050-4831. This indicates validated use in U.S. government and defense supply chains.

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40ED108 — TRANSISTOR

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