4-25257P — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

4-25257P: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.297 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, unable_to_decode: UNABLE TO DECODE, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-137-5468, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

4-25257P

NSN: 5961-00-137-5468
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: A2608 — BASTOGI SISTEMI SPA (ITA)

SPECIFICATIONS

overall_length	0.297 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.620 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
unable_to_decode	UNABLE TO DECODE
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
specification/standard_data	80131-RELEASE5676 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-137-5468

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.620 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

UNABLE TO DECODE: UNABLE TO DECODE

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.620 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
UNABLE TO DECODE	UNABLE TO DECODE
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.297 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 4

RELEASE5676Reference document

Same NSN cross-reference

Reference document — Secondary reference

28463-32002Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

2N4233Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N4233AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

Ready to buy 4-25257P?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is 4-25257P?

4-25257P is a TRANSISTOR.

What parts can replace 4-25257P?

There are 4 known substitutes for 4-25257P: RELEASE5676, 28463-32002, 2N4233 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 4-25257P?

4-25257P is cataloged in the U.S. Government catalog under NSN 5961-00-137-5468. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

4-25257P — TRANSISTOR

Request a Quote — 4-25257P