3E4850/25-0001 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

3E4850/25-0001: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-025-1106, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

3E4850/25-0001

NSN: 5961-01-025-1106
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 73030 — HAMILTON SUNDSTRAND CORPORATION DBA COLLINS AEROSPACE (USA)

SPECIFICATIONS

overall_length	0.340 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
overall_diameter	0.620 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD AND 1 CASE
specification/standard_data	80131-RELEASE6384 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	90.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
current_rating_per_characteristic	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-01-025-1106

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.620 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.620 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.340 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 3

SM-A-936124-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

2N6316Reference document

Same NSN cross-reference

Reference document — Secondary reference

RELEASE6384Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 3E4850/25-0001?

3E4850/25-0001 is a TRANSISTOR.

What parts can replace 3E4850/25-0001?

There are 3 known substitutes for 3E4850/25-0001: SM-A-936124-1, 2N6316, RELEASE6384. Substitute compatibility should be verified for your specific system.

What is the NSN for 3E4850/25-0001?

3E4850/25-0001 is cataloged in the U.S. Government catalog under NSN 5961-01-025-1106. This indicates validated use in U.S. government and defense supply chains.

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