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3AF1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

3AF1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: STEEL INNER RING, bore_shape: STRAIGHT, bore_diameter: 15.0 MILLIMETERS NOMINAL MM, overall_width: 0.4330 INCHES NOMINAL IN, overall_length: 0.427 INCHES NOMINAL IN, surface_finish: GROUND. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-014-2895, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
3AF1
NSN: 5961-00-014-2895
NIINs: 000142895, 005543634
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 51589 — ST-SEMICON INC (USA)
SPECIFICATIONS
materialSTEEL INNER RING
bore_shapeSTRAIGHT
bore_diameter15.0 MILLIMETERS NOMINAL MM
overall_width0.4330 INCHES NOMINAL IN
overall_length0.427 INCHES NOMINAL IN
surface_finishGROUND
mounting_methodTERMINAL
terminal_length1.470 INCHES NOMINAL IN
locating_featureNONLOCATING
overall_diameter0.481 INCHES NOMINAL IN
special_featuresCLASS 1, TYPE 215, GRADE 00
style_designatorSINGLE ROW, NON-LOCATING, CYLINDRICAL INNER RING, TWO LIP OUTER RING, SEPARABLE
NSN5961-00-014-2895
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 3AF1 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
OVERALL DIAMETER: 0.481 INCHES NOMINAL IN
•
TERMINAL LENGTH: 1.470 INCHES NOMINAL IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
•
MATERIAL: SILICON SEMICONDUCTOR
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, PEAK
OVERALL DIAMETER0.481 INCHES NOMINAL IN
TERMINAL LENGTH1.470 INCHES NOMINAL IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.427 INCHES NOMINAL IN
FEATURES PROVIDEDGOLD PLATED LEADS AND HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MATERIALSILICON SEMICONDUCTOR
MATERIALPLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 1
4812-01-00001Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 3AF1?
3AF1 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 3AF1?
There is 1 known substitute for 3AF1: 4812-01-00001. Substitute compatibility should be verified for your specific system.
What is the NSN for 3AF1?
3AF1 is cataloged in the U.S. Government catalog under NSN 5961-00-014-2895. This indicates validated use in U.S. government and defense supply chains.
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