391-0353-252: RECTIFIER,SEMICONDUCTOR DEVICE,U.
RECTIFIER,SEMICONDUCTOR DEVICE,U. Key specifications include material: SILICON, overall_width: 0.410 INCHES MAXIMUM IN, overall_height: 0.420 INCHES MAXIMUM IN, overall_length: 0.680 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: RESCREENED FOR CGAD PROGRAMS; CONTAINS BERYLLIUM OXIDE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-381-7935, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON |
| overall_width | 0.410 INCHES MAXIMUM IN |
| overall_height | 0.420 INCHES MAXIMUM IN |
| overall_length | 0.680 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | RESCREENED FOR CGAD PROGRAMS; CONTAINS BERYLLIUM OXIDE |
| operating_temp_range | -55.0 TO 150.0 CELSIUS DEGC |
| terminal_type_and_quantity | 4 TAB |
| precious_material_and_location | PLATED TERMINALS AND BASE SILVER |
| circuit_connection_style_designator | INVERTED CENTER TAP 1 PHASE |
| absolute_maximum_current_rating_per_characteristic | 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| absolute_maximum_voltage_rating_in_volts_per_characteristic | 150.0 BREAKDOWN VOLTAGE, DC |
| NSN | 5961-01-381-7935 |
| OVERALL HEIGHT | 0.420 INCHES MAXIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| OVERALL LENGTH | 0.680 INCHES MAXIMUM IN |
| OVERALL WIDTH | 0.410 INCHES MAXIMUM IN |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| SPECIAL FEATURES | RESCREENED FOR CGAD PROGRAMS; CONTAINS BERYLLIUM OXIDE |
| PRECIOUS MATERIAL AND LOCATION | PLATED TERMINALS AND BASE SILVER |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 BREAKDOWN VOLTAGE, DC |
| OPERATING TEMP RANGE | -55.0 TO 150.0 CELSIUS DEGC |
| MATERIAL | SILICON |