391-0352-152: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.534 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN, overall_height: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, overall_length: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN, mounting_method: TERMINAL AND UNTHREADED HOLE(S), special_test_features: RESCREENED FOR CGAD PROGRAMS, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-381-2043, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.534 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN |
| overall_height | 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| overall_length | 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN |
| mounting_method | TERMINAL AND UNTHREADED HOLE(S) |
| special_test_features | RESCREENED FOR CGAD PROGRAMS |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 27.00 AMPERES MAXIMUM DRAIN CURRENT AND 27.00 AMPERES MAXIMUM SOURCE CURRENT |
| voltage_rating_in_volts_per_characteristic | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| NSN | 5961-01-381-2043 |
| OVERALL HEIGHT | 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| SPECIAL TEST FEATURES | RESCREENED FOR CGAD PROGRAMS |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 0.534 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN |