The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-153-7302, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.620 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| internal_junction_configuration | NPN |
| power_rating_per_characteristic | 133.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-153-7302 |
| POWER RATING PER CHARACTERISTIC | 133.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM IN |
| INTERNAL JUNCTION CONFIGURATION | NPN |