35821E-H27 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

35821E-H27: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.025 INCHES MINIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.204 INCHES MINIMUM AND 0.206 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, precious_material: GOLD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-074-0657, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

35821E-H27

NSN: 5961-01-074-0657
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1LQK8 — KEYSIGHT TECHNOLOGIES, INC. (USA)

SPECIFICATIONS

overall_length	0.025 INCHES MINIMUM IN
mounting_method	PRESS FIT
overall_diameter	0.204 INCHES MINIMUM AND 0.206 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
precious_material	GOLD
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	4 RIBBON
precious_material_and_location	TERMINALS AND LID SURFACES GOLD
power_rating_per_characteristic	700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
NSN	5961-01-074-0657

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.204 INCHES MINIMUM AND 0.206 INCHES MAXIMUM IN

•

PRECIOUS MATERIAL: GOLD

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	27.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.204 INCHES MINIMUM AND 0.206 INCHES MAXIMUM IN
PRECIOUS MATERIAL	GOLD
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.025 INCHES MINIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

H27-35821EReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Semi-active item — no replacement plannedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 35821E-H27?

35821E-H27 is a TRANSISTOR.

What parts can replace 35821E-H27?

There is 1 known substitute for 35821E-H27: H27-35821E. Substitute compatibility should be verified for your specific system.

What is the NSN for 35821E-H27?

35821E-H27 is cataloged in the U.S. Government catalog under NSN 5961-01-074-0657. This indicates validated use in U.S. government and defense supply chains.

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35821E-H27 — TRANSISTOR

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