353-6554-202 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

353-6554-202: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.340 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.112 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-502-4516, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

353-6554-202

NSN: 5961-00-502-4516
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 13499 — ROCKWELL COLLINS, INC. DBA COLLINS AEROSPACE GOVERNMENT SYSTEMS DIV COLLINS AEROSPACE - GOVERNMENT SYSTEMS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.340 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.112 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.187 INCHES MAXIMUM IN
terminal_type_and_quantity	1 SOLDER STUD AND 1 THREADED STUD
power_rating_per_characteristic	7.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 AMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
NSN	5961-00-502-4516

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.187 INCHES MAXIMUM IN

•

NOMINAL THREAD SIZE: 0.112 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1.1 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	0.340 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.187 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.112 INCHES IN
CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 AMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 1

UTR6410RReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 353-6554-202?

353-6554-202 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 353-6554-202?

There is 1 known substitute for 353-6554-202: UTR6410R. Substitute compatibility should be verified for your specific system.

What is the NSN for 353-6554-202?

353-6554-202 is cataloged in the U.S. Government catalog under NSN 5961-00-502-4516. This indicates validated use in U.S. government and defense supply chains.

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353-6554-202 — SEMICONDUCTOR DEVICE,DIODE

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