The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.600 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, nominal_thread_size: 0.500 INCHES IN, semiconductor_material: SILICON, thread_series_designator: UNF. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-764-3218, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 1.600 INCHES NOMINAL IN |
| mounting_method | THREADED STUD(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPN |
| nominal_thread_size | 0.500 INCHES IN |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| specification/standard_data | 80131-RELEASE3317 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| power_rating_per_characteristic | 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| current_rating_per_characteristic | 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 300.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| NSN | 5961-00-764-3218 |
| NOMINAL THREAD SIZE | 0.500 INCHES IN |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| MOUNTING METHOD | THREADED STUD(S) |
| THREAD SERIES DESIGNATOR | UNF |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| OVERALL LENGTH | 1.600 INCHES NOMINAL IN |
| SEMICONDUCTOR MATERIAL | SILICON |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE3317 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION |