353-2699-020: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, mounting_method: TERMINAL, features_provided: HERMETICALLY SEALED CASE, precious_material: GOLD, internal_configuration: POINT CONTACT, semiconductor_material: GALLIUM ARSENIDE. This part is cataloged in the U.S.
Government catalog under NSN 5980-00-503-9863, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE |
| mounting_method | TERMINAL |
| features_provided | HERMETICALLY SEALED CASE |
| precious_material | GOLD |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE |
| terminal_type_and_quantity | 2 PIN |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| precious_material_and_location | CASE AND TABS GOLD |
| internal_junction_configuration | PN |
| current_rating_per_characteristic | 100.000 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 2.0 MAXIMUM REVERSE VOLTAGE, DC |
| NSN | 5980-00-503-9863 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR DEGC |
| PRECIOUS MATERIAL | GOLD |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | POINT CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 100.000 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| FUNCTION FOR WHICH DESIGNED | VISIBLE LIGHT EMITTING |