353-1990-000 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

353-1990-000: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.308 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-493-4899, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

353-1990-000

NSN: 5961-00-493-4899
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 13499 — ROCKWELL COLLINS, INC. DBA COLLINS AEROSPACE GOVERNMENT SYSTEMS DIV COLLINS AEROSPACE - GOVERNMENT SYSTEMS (USA)

SPECIFICATIONS

overall_length	1.308 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
specification/standard_data	81349-MIL-PRF-19500/168 GOVERNMENT SPECIFICATION
NSN	5961-00-493-4899

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 10.0 MAXIMUM PEAK GATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 10.0 MAXIMUM PEAK GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.308 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.190 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 7

SFS092Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

JANTX2N1772AReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

418000-7Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

H8000699-001Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N1772Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

H8000092-001TReference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 353-1990-000?

353-1990-000 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 353-1990-000?

There are 7 known substitutes for 353-1990-000: SFS092, JANTX2N1772A, 418000-7 and 4 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 353-1990-000?

353-1990-000 is cataloged in the U.S. Government catalog under NSN 5961-00-493-4899. This indicates validated use in U.S. government and defense supply chains.

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353-1990-000 — SEMICONDUCTOR DEVICE,THYRISTOR

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