352250022991 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

352250022991: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN, overall_diameter: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN, special_features: 1.0W RATED AVERAGE POWER DISSIPATION; 1500W REPETETIVE PEAK PULSE POWER. W.

This part is cataloged in the U.S. Government catalog under NSN 5961-00-622-3131, indicating validated use in U.S. government and defense logistics supply chains.

Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

352250022991

NSN: 5961-00-622-3131
NIINs: 006223131, 010587804
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: H0203 — THALES NEDERLAND (NLD)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN
overall_diameter	0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN
special_features	1.0W RATED AVERAGE POWER DISSIPATION; 1500W REPETETIVE PEAK PULSE POWER. W
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	TRANSIENT SUPPRESSOR
specification/standard_data	81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
voltage_tolerance_in_percent	-5.0 TO 5.0
power_rating_per_characteristic	1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-00-622-3131

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.3 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 59.5 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.235 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	15.3 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	59.5 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.235 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.357 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA	80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 6

1N5639AReference document

Same NSN cross-reference

Reference document — Design control — primary reference

RELEASE6049Reference document

Same NSN cross-reference

Reference document — Secondary reference

1-5K18AReference document

Same NSN cross-reference

Reference document — Secondary reference

402-7614Reference document

Same NSN cross-reference

Reference document — Informative reference only

GS810GN5Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1N5639AAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 352250022991?

352250022991 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 352250022991?

There are 6 known substitutes for 352250022991: 1N5639A, RELEASE6049, 1-5K18A and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 352250022991?

352250022991 is cataloged in the U.S. Government catalog under NSN 5961-00-622-3131. This indicates validated use in U.S. government and defense supply chains.

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352250022991 — SEMICONDUCTOR DEVICE,DIODE

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