352-1068-030: SEMICONDUCTOR DEVICE SET.
The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include material: PLASTIC INCLOSURE ALL TRANSISTOR, overall_length: 0.185 INCHES MAXIMUM ALL TRANSISTOR IN, mounting_method: TERMINAL ALL TRANSISTOR, terminal_length: 0.500 INCHES MINIMUM ALL TRANSISTOR IN, features_provided: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE, internal_configuration: FIELD EFFECT ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-271-1763, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC INCLOSURE ALL TRANSISTOR |
| overall_length | 0.185 INCHES MAXIMUM ALL TRANSISTOR IN |
| mounting_method | TERMINAL ALL TRANSISTOR |
| terminal_length | 0.500 INCHES MINIMUM ALL TRANSISTOR IN |
| features_provided | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| internal_configuration | FIELD EFFECT ALL TRANSISTOR |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 12 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| component_name_and_quantity | 4 TRANSISTOR |
| component_function_relationship | MATCHED |
| power_rating_per_characteristic | 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR |
| NSN | 5961-01-271-1763 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION ALL TRANSISTOR DEGC |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR IN |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.185 INCHES MAXIMUM ALL TRANSISTOR IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |