348556-1 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

348556-1: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_height: 0.210 INCHES NOMINAL IN, overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-013-8744, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

348556-1

NSN: 5961-00-013-8744
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 3B150 — RAYTHEON COMPANY DBA RAYTHEON CO (USA)

SPECIFICATIONS

overall_height	0.210 INCHES NOMINAL IN
overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE5495 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-013-8744

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM DRAIN TO GATE VOLTAGE

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72

•

OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.210 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-30.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -30.0 MAXIMUM DRAIN TO GATE VOLTAGE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-72
OVERALL DIAMETER	0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 2

RELEASE5495Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N4353Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 348556-1?

348556-1 is a TRANSISTOR.

What parts can replace 348556-1?

There are 2 known substitutes for 348556-1: RELEASE5495, 2N4353. Substitute compatibility should be verified for your specific system.

What is the NSN for 348556-1?

348556-1 is cataloged in the U.S. Government catalog under NSN 5961-00-013-8744. This indicates validated use in U.S. government and defense supply chains.

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348556-1 — TRANSISTOR

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