338317 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

338317: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.535 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.312 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-031-1997, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

338317

NSN: 5961-01-031-1997
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 56232 — LOCKHEED MARTIN CORPORATION DIV RMS - MITCHEL FIELD (USA)

SPECIFICATIONS

overall_length	0.535 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.312 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
end_item_identification	MX-8169/SQQ23 FSCM 56232
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.875 INCHES MAXIMUM IN
terminal_type_and_quantity	3 TAB, SOLDER LUG
NSN	5961-01-031-1997

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.535 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.875 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.312 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 2

2N3597Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

RELEASE4826Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Semi-active item — no replacement plannedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 338317?

338317 is a TRANSISTOR.

What parts can replace 338317?

There are 2 known substitutes for 338317: 2N3597, RELEASE4826. Substitute compatibility should be verified for your specific system.

What is the NSN for 338317?

338317 is cataloged in the U.S. Government catalog under NSN 5961-01-031-1997. This indicates validated use in U.S. government and defense supply chains.

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