322MS223P001 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

322MS223P001: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-086-8053, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

322MS223P001

NSN: 5961-00-086-8053
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 54X10 — RAYTHEON COMPANY (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
current_rating_per_characteristic	5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
NSN	5961-00-086-8053

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE

SUBSTITUTES & CROSS-REFERENCES 4

2N1879Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

2N1878Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

RELEASE3763Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

2N1885Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 322MS223P001?

322MS223P001 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 322MS223P001?

There are 4 known substitutes for 322MS223P001: 2N1879, 2N1878, RELEASE3763 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 322MS223P001?

322MS223P001 is cataloged in the U.S. Government catalog under NSN 5961-00-086-8053. This indicates validated use in U.S. government and defense supply chains.

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322MS223P001 — SEMICONDUCTOR DEVICE,THYRISTOR

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