31A12HNA0: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.680 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.350 INCHES NOMINAL IN, overall_diameter: 0.250 INCHES NOMINAL IN, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-185-1402, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.680 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.350 INCHES NOMINAL IN |
| overall_diameter | 0.250 INCHES NOMINAL IN |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 40.0 MILLICANDELA MAXIMUM |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| color_tone_produced_per_source | AMBER LENS |
| internal_junction_configuration | PN |
| NSN | 5980-01-185-1402 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 0.250 INCHES NOMINAL IN |
| TERMINAL LENGTH | 0.350 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 40.0 MILLICANDELA MAXIMUM |
| OVERALL LENGTH | 0.680 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 34.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
No substitute or cross-reference records for this part.