3179599: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, features_provided: BURN IN AND HERMETICALLY SEALED CASE, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-249-8304, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| features_provided | BURN IN AND HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.05 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION |
| current_rating_per_characteristic | 0.35 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 25.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 0.50 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK |
| voltage_rating_in_volts_per_characteristic | 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 100.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-249-8304 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN |
| FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 0.35 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 25.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 0.50 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK |
| TEST DATA DOCUMENT | 53711-5882634 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |