3035A — SEMICONDUCTOR DEVICE,PHOTO

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

3035A: SEMICONDUCTOR DEVICE,PHOTO.

The SEMICONDUCTOR DEVICE,PHOTO is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.110 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN, overall_height: 0.080 INCHES MINIMUM AND 0.125 INCHES MAXIMUM IN, overall_length: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.505 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-342-8402, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

3035A

NSN: 5961-01-342-8402
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 7T184 — NTE ELECTRONICS, INC (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.110 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
overall_height	0.080 INCHES MINIMUM AND 0.125 INCHES MAXIMUM IN
overall_length	0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.505 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN
semiconductor_material	SILICON
end_item_identification	6625-01-235-0428 MULTIMETER
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	PHOTOTRANSISTOR
power_rating_per_characteristic	150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	100.00 NANOAMPERES MAXIMUM DARK CURRENT
NSN	5961-01-342-8402

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 0.505 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.080 INCHES MINIMUM AND 0.125 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	0.505 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
OVERALL WIDTH	0.110 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	100.00 NANOAMPERES MAXIMUM DARK CURRENT
FUNCTION FOR WHICH DESIGNED	PHOTOTRANSISTOR

SUBSTITUTES & CROSS-REFERENCES 2

NTE3035ASame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

MRD711Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 3035A?

3035A is a SEMICONDUCTOR DEVICE,PHOTO.

What parts can replace 3035A?

There are 2 known substitutes for 3035A: NTE3035A, MRD711. Substitute compatibility should be verified for your specific system.

What is the NSN for 3035A?

3035A is cataloged in the U.S. Government catalog under NSN 5961-01-342-8402. This indicates validated use in U.S. government and defense supply chains.

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3035A — SEMICONDUCTOR DEVICE,PHOTO

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