The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.104 INCHES MAXIMUM IN, features_provided: PROGRAMMED AND ELECTRICALLY ALTERABLE, memory_device_type: PAL. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System under NSN 5961-00-232-8920, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_length | 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.104 INCHES MAXIMUM IN |
| features_provided | PROGRAMMED AND ELECTRICALLY ALTERABLE |
| memory_device_type | PAL |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| hybrid_technology_type | MONOLITHIC |
| end_item_identification | CV-3993/SYS-2 E/I FSCM 21877 |
| inclosure_configuration | DUAL-IN-LINE |
| time_rating_per_chacteristic | 20.00 NANOSECONDS NOMINAL ACCESS NS |
| power_rating_per_characteristic | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| NSN | 5961-00-232-8920 |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 48.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| MOUNTING METHOD | TERMINAL |
| OVERALL DIAMETER | 0.104 INCHES MAXIMUM IN |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM IN |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | GLASS ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |