2N7075-2 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N7075-2: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN, overall_length: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN, mounting_method: TERMINAL, features_provided: HERMETICALLY SEALED CASE AND BURN IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-361-0876, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N7075-2

NSN: 5961-01-361-0876
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

overall_width	0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN
overall_length	0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN
mounting_method	TERMINAL
features_provided	HERMETICALLY SEALED CASE AND BURN IN
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	30.00 AMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-361-0876

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE AND BURN IN
CURRENT RATING PER CHARACTERISTIC	30.00 AMPERES NOMINAL DRAIN CURRENT
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N7075-2?

2N7075-2 is a TRANSISTOR.

What is the NSN for 2N7075-2?

2N7075-2 is cataloged in the U.S. Government catalog under NSN 5961-01-361-0876. This indicates validated use in U.S. government and defense supply chains.

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2N7075-2 — TRANSISTOR

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