2N6678 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6678: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.519 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM IN, overall_diameter: 0.875 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-101-7899, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6678

NSN: 5961-01-101-7899
NIINs: 011017899, 011344872, 012121666, 013216559, 015654550
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 34371 — RENESAS ELECTRONICS AMERICA INC (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.450 INCHES MAXIMUM IN
overall_length	1.519 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
terminal_length	0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM IN
overall_diameter	0.875 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
end_item_identification	1430-01-087-6330
terminal_circle_diameter	0.430 INCHES NOMINAL IN
NSN	5961-01-101-7899

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL AND THREADED STUD(S)

•

INTERNAL JUNCTION CONFIGURATION: NPN

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	650.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
TERMINAL LENGTH	0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL AND THREADED STUD(S)
INTERNAL JUNCTION CONFIGURATION	NPN
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT

SUBSTITUTES & CROSS-REFERENCES 3

1854-0896Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

RELEASE6732Reference document

Same NSN cross-reference

Reference document — Secondary reference

TRA-020Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6678?

2N6678 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 2N6678?

There are 3 known substitutes for 2N6678: 1854-0896, RELEASE6732, TRA-020. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6678?

2N6678 is cataloged in the U.S. Government catalog under NSN 5961-01-101-7899. This indicates validated use in U.S. government and defense supply chains.

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2N6678 — SEMICONDUCTOR DEVICE,DIODE

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