2N6657 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6657: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES NOMINAL IN, overall_height: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, overall_length: 1.534 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-103-9699, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6657

NSN: 5961-01-103-9699
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 07263 — FAIRCHILD SEMICONDUCTOR CORP (USA)

SPECIFICATIONS

overall_width	1.050 INCHES NOMINAL IN
overall_height	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
overall_length	1.534 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	1 CASE AND 2 PIN
power_rating_per_characteristic	25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	2.00 AMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS CASE DEGC
NSN	5961-01-103-9699

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.534 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	1.050 INCHES NOMINAL IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

Ready to buy 2N6657?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is 2N6657?

2N6657 is a TRANSISTOR.

What is the NSN for 2N6657?

2N6657 is cataloged in the U.S. Government catalog under NSN 5961-01-103-9699. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

2N6657 — TRANSISTOR

Request a Quote — 2N6657