2N6508G — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6508G: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 10.66 MILLIMETERS MAXIMUM MM, overall_height: 4.82 MILLIMETERS MAXIMUM MM, overall_length: 16.51 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL, terminal_length: 14.73 MILLIMETERS MAXIMUM MM. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-267-2280, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6508G

NSN: 5961-01-267-2280
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 5FWY4 — LITTELFUSE WORLD HQ (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_width	10.66 MILLIMETERS MAXIMUM MM
overall_height	4.82 MILLIMETERS MAXIMUM MM
overall_length	16.51 MILLIMETERS MAXIMUM MM
mounting_method	TERMINAL
terminal_length	14.73 MILLIMETERS MAXIMUM MM
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
terminal_type_and_quantity	3 PIN
power_rating_per_characteristic	500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
NSN	5961-01-267-2280

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 CELSIUS CASE DEGC

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB

•

TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM MM

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	4.82 MILLIMETERS MAXIMUM MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	129.0 CELSIUS CASE DEGC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-220AB
TERMINAL LENGTH	14.73 MILLIMETERS MAXIMUM MM
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	16.51 MILLIMETERS MAXIMUM MM
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	10.66 MILLIMETERS MAXIMUM MM

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

1884-0268Reference document

Same NSN cross-reference

Reference document — Secondary reference

2N6508Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6508G?

2N6508G is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N6508G?

There are 2 known substitutes for 2N6508G: 1884-0268, 2N6508. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6508G?

2N6508G is cataloged in the U.S. Government catalog under NSN 5961-01-267-2280. This indicates validated use in U.S. government and defense supply chains.

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2N6508G — SEMICONDUCTOR DEVICE,THYRISTOR

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