2N6505 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6505: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 10.660 INCHES MAXIMUM IN, overall_height: 4.820 INCHES MAXIMUM IN, overall_length: 16.510 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-176-1735, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6505

NSN: 5961-01-176-1735
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	10.660 INCHES MAXIMUM IN
overall_height	4.820 INCHES MAXIMUM IN
overall_length	16.510 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 PIN
current_rating_per_characteristic	16.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
NSN	5961-01-176-1735

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	4.820 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-220
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	16.510 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
OVERALL WIDTH	10.660 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	16.00 AMPERES MAXIMUM ON-STATE CURRENT, DC

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

1884-0281Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6505?

2N6505 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N6505?

There is 1 known substitute for 2N6505: 1884-0281. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6505?

2N6505 is cataloged in the U.S. Government catalog under NSN 5961-01-176-1735. This indicates validated use in U.S. government and defense supply chains.

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2N6505 — SEMICONDUCTOR DEVICE,THYRISTOR

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