2N6395 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6395: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.330 INCHES MINIMUM AND 0.355 INCHES MAXIMUM IN, overall_height: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN, overall_length: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-058-4304, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6395

NSN: 5961-01-058-4304
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.330 INCHES MINIMUM AND 0.355 INCHES MAXIMUM IN
overall_height	0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN
overall_length	0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN
features_provided	MOUNTING HARDWARE
semiconductor_material	SILICON
terminal_circle_diameter	0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
terminal_type_and_quantity	3 PIN AND 1 CASE
specification/standard_data	80131-RELEASE6437 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
NSN	5961-01-058-4304

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM IN
OVERALL WIDTH	0.330 INCHES MINIMUM AND 0.355 INCHES MAXIMUM IN
FEATURES PROVIDED	MOUNTING HARDWARE
CURRENT RATING PER CHARACTERISTIC	12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL

SUBSTITUTES & CROSS-REFERENCES 2

RELEASE6437Reference document

Same NSN cross-reference

Reference document — Secondary reference

5214-357Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6395?

2N6395 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N6395?

There are 2 known substitutes for 2N6395: RELEASE6437, 5214-357. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6395?

2N6395 is cataloged in the U.S. Government catalog under NSN 5961-01-058-4304. This indicates validated use in U.S. government and defense supply chains.

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2N6395 — SEMICONDUCTOR DEVICE,THYRISTOR

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