2N6281: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.535 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.312 INCHES IN, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-474-8500, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.535 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.312 INCHES IN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.875 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 3 TAB, SOLDER LUG |
| specification/standard_data | 80131-RELEASE6361 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| internal_junction_configuration | NPN |
| NSN | 5961-00-474-8500 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.535 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL WIDTH ACROSS FLATS | 0.875 INCHES MAXIMUM IN |