The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.375 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-007-6813, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.375 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.875 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| specification/standard_data | 80131-RELEASE6313 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| internal_junction_configuration | NPN |
| power_rating_per_characteristic | 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| NSN | 5961-01-007-6813 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| POWER RATING PER CHARACTERISTIC | 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| OVERALL LENGTH | 0.375 INCHES NOMINAL IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |