2N6069B — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

2N6069B: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN, overall_height: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN, overall_length: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-123-7935, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

2N6069B

NSN: 5961-01-123-7935
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
overall_height	0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
overall_length	0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
end_item_identification	TSC-60(V)6 E/I FSCM 95104
mounting_facility_quantity	1
terminal_type_and_quantity	3 PIN
power_rating_per_characteristic	10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
voltage_rating_in_volts_per_characteristic	50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
NSN	5961-01-123-7935

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	110.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
OVERALL WIDTH	0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
END ITEM IDENTIFICATION	TSC-60(V)6 E/I FSCM 95104

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

2N6069Reference document

Same NSN cross-reference

Reference document — Secondary reference

353-3166-020Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 2N6069B?

2N6069B is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 2N6069B?

There are 2 known substitutes for 2N6069B: 2N6069, 353-3166-020. Substitute compatibility should be verified for your specific system.

What is the NSN for 2N6069B?

2N6069B is cataloged in the U.S. Government catalog under NSN 5961-01-123-7935. This indicates validated use in U.S. government and defense supply chains.

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