2N6050: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.519 INCHES MAXIMUM IN, transfer_ratio: 750.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: UNTHREADED HOLE(S). This part is cataloged in the U.S.
Government catalog under NSN 5961-01-035-2186, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.450 INCHES MAXIMUM IN |
| overall_length | 1.519 INCHES MAXIMUM IN |
| transfer_ratio | 750.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT-DARLINGTON CONNECTED |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNTHREADED HOLE AND 1 CASE |
| NSN | 5961-01-035-2186 |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.875 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |